Investigation of the effect of nickel doped on the structural surface and optical properties of zno thin films prepared by the silar method

Thin film technologies play a significant role in the development of modern electronic and optoelectronic devices. These technologies attract considerable interest in many application areas by enabling the production of high-performance and low-cost materials. Zinc oxide (ZnO) thin films stand out as a potential material for various electronic and optical devices. Thin film technologies in this field promise high efficiency and low-cost devices. ZnO is a semiconductor material with a wide energy range, making it an attractive option for use in electronic and optoelectronic devices due to its optical properties and high electron transport capabilities. Additionally, the physical and chemical properties of ZnO indicate a wide range of potential applications, from surface coatings to sensors in various industrial applications. Especially, doped ZnO semiconductor materials grown on FTO (fluorine-tin-oxide) substrates are significant candidates for many applications such as solar cells, gas sensors, and biosensors. In this thesis study, undoped FTO/ZnO and Nickel (Ni) doped, Ni 1% FTO/ZnO, Ni 2% FTO/ZnO, and Ni 3% FTO/ZnO thin films prepared using the SILAR (Successive Ionic Layer Adsorption and Reaction) method were investigated. The influence of nickel's contribution on the structural, surface, and optical properties of the produced films was particularly studied. Structural analyses were conducted using techniques such as X-ray diffraction (XRD) and scanning electron microscopy (SEM). The findings indicate significant changes in the crystal structures and surface morphologies of nickel-doped FTO/ZnO thin films. Additionally, the optical properties were examined using UV-Vis spectroscopy, and the impact of nickel on the film's optical characteristics was thoroughly ii evaluated. Nickel doping levels in the ZnO thin films were altered from 1% to 3%. SEM EDS analyses revealed that the produced ZnO thin films formed cluster-like structures. It was observed that the structures varied depending on the nickel content. Surface homogeneity distribution was most evident in the FTO/ZnO-Ni 3% sample among the produced specimens. XRD analyses identified the dominant diffraction peaks of the samples as SnO2 (FTO-substrate). Overall, the samples exhibited a tetragonal crystal structure with orientations of (101), (202), and (211). As the Ni-doped concentration increased, an increase in peak intensities and a decrease in half-peak widths in the films were observed. These results demonstrate the potential use of the produced samples in solar cell technologies, semiconductor-based gas sensor fabrication, and similar fields.