Investigation of some properties of semiconductors using kinetic transport theory

In this study, many physical properties of semiconductors were investigated by using the kinetic effect theory, which is one of the general theoretical approaches. New studies for analytical calculation of one and two parameter Fermi functions play a major role in the study of kinetic effects and electron transport phenomena in semiconductors. Recent developments in the literature, such as one- and two-parameter Fermi functions, have allowed the evaluation of the standard region transverse Nernst-Ettingshausen effect, Hall coefficient and other important properties of semiconductors in the case of weak magnetic field. In the applications, analytical formulas developed by Guseinov and Mamedov for one and two parameter Fermi functions have been used recently. The advantage of this work is that new developments in the application of kinetic effect theory allow the calculation of many properties of semiconductors. By using the kinetic effect theory, the standard zone transverse Nernst-Ettingshausen effect of silicon (Si) and germanium(Ge) semiconductors in weak magnetic field, electrical resistance, Hall effect and Seebeck coefficient and gallium nitride (GaN) semiconductor electron concentration were calculated at different values of parameters. It has been shown that the applied method will be very useful in the theoretical investigation of many physical properties of semiconductors. In addition, using the Debye approach, the application of the new analytical approach proposed in the literature has been made to calculate the change of the heat amount of the semiconductors according to the temperature. The approach proposed in the literature has been applied to indium arsenide (InAs) and gallium arsenide (GaAs) semiconductors. Our results were checked with numerical data to show the effectiveness of the formulas in this study.