Frequency and radiation dependence of basic electrical parameters of the MIS structures

In this study, we have investigated some basic electrical parameters depend onfrequency and radiation of Al/SiO2/p-Si (MIS) structures. Al/SiO2/p-Si structurecapacitance-voltage (C-V) and conductance-voltage (G/ω-V) measurements fordifferent frequency were made in room temperature. From these measurementswe calculate frequency dependent series resistance, interface state density of60structure. After than with the Co gamma-ray source in different doses, wemade same measurement and calculations. Results show that in experimentsthis structure almost all basic electrical parameters of change by interface statedensity, series resistance, d.c. voltage, frequency and radiation.Science Code : 202. 1. 147Keywords : MIS structure, frequency dependent, radiation effect, seriesresistance, interface statesPage Number : 54Adviser : Associate Professor Şemsettin ALTINDAL