Investigation of the diode and optical properties of metal semiconductors contacts prepared with n-GaP semiconductor

In this study, Au/n-GaP structures were prepared on n-type GaP semiconductor with orientation (100) and having 300 ?m thickness and carriers concentration of 1x1018cm-3 by metal evaporation method and using different cleaning methods. Some basic electrical parameters of these structures were investigated in the range of 80K-380K. Prepared structure's current-voltage (I-V) specifications has been calculated under 80K-380K temperature ranges and ideality factor n, Schottky barrier heights ?B and other related diode parameters has been evaluated. In addition at different temperatures fill factor, series resistance, efficiency has been calculated under light conditions. At room temperature for oxided and without oxided samples, it has been determined for barrier heights as 0.485 eV and 0,696 eV and for ideality factors as 1.17 and 1.27 respectively. It has been observed that ideality factor decreases barrier height increases as temperature increases. Current-voltage (I-V) has been measured with different output powers of 5-250 watt using the Light Source. Solar cell parameters using data gathered from this measurement has been evaluated. Fill factors for oxided and without oxided samples has been found as 41.61% and 73.14% and efficiencies as 11.56% and 15.61% respectively, with the Light Source having 250 watt of power output. Barrier heights and ideality factors of Schottky diodes have been analyzed using filters with different wavelengths in five different powers of light sources ranging from 50 to 250 watt. It has been observed that barrier heights and ideality factor changes with changing light frequency. Solar cell parameters have been analyzed for 250 watt of output power for all filters. At 1 MHz frequency, capacitance-voltage (C-V) specifications has been analyzed. Density of interface states values for oxidized sample were evaluated from C-V measurements. Using 1/C²-V graphic data; diffusion voltage VD, barrier height ?B, concentration of donor ND, width of depletion layer WD and insulation layer thickness has been calculated. At room temperature barrier height value has been calculated as 0,68 eV from C-V measurements.