Mosaic defect investigation in the functional materials with nitrate (GaN/AlN/alInN/InGaN )

With the metal-organic chemical vapor deposition (MOCVD) method, InGaN and AlInN, respectively LED and HEMT structures, were grown on sapphire subtrate as AIN buffer and GaN epi-layer. Under In increase, 5x (InGan / GaN) Multi-Quantum Well (MQW) LED and AlInN/AlN/GaN HEMT structural features were studied with high resolution X-Ray Diffraction (HRXRD) and structural results were compared with result parameters of Hall Impacts (HALL) and atomic force microscopy (AFM) and Fourier Transform Infrared Spectroscopy (FTIR).We, depending on the In implementation rates, scrutinized the mosaic defects of AlN or GaN wing, GaN buffer and InGaN active layers in these structures in detail. The HRXRD measurement results of LED structure of both AlN and GaN layers vary monomatically with Indium rates. But some defect properties of these layers show opposite-to-each-other behavior. Moreover, because crystallization property is not in good level in HRXRD measurements, a few of the miller planes are not observed. However, AlInN structural defect property can be simply followed from the HRXRD peak half width (0,20, 0,35 and 0,16 degree) of every three miller plane samples (0.04). The increase and decrease in AlInN half-width figures is similar to GaN and AlN compliance. The lateral and vertical lengths of active layer of the HRXRD results in HEMT structure, bending and twist angles and mixed strain figures are monotonically affected by In rates. AFM results depend on In rates of surface morphology of the layers. While In rates are at increase, the surface morphology of the samples change from a terraced structure into island-like structure. The FTIR and PL results of active layer are compatible with HRXRD mosaic defect properties. As a result, the mosaic defect structures of AlN and GaN structures have the same tendency and representation of InGaN MQW LED and AlInN HEMT.