Comparison of the photoconductivity properties of the n and p type zno thin films which are grown by pfvad system
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Abstract (EN)
In this study, n and p type ZnO thin films were deposited at room temperature on glass substrates by Pulsed Filtered Cathodic Vacuum Arc Deposition (PFCVAD) system. There are three part of semiconductor thin films in this study. In first part, n and p type thin films were prepared with thermal oxidation method and second and third part of these thin film?s pressure is higher than first part of thin films. Finally, optical, structural, electrical, surface images and photoconductivity properties of these thin films were determined and discussed.
Author
Kamuran Kara
How to Cite
Kamuran Kara (Doctorate thesis). Comparison of the photoconductivity properties of the n and p type zno thin films which are grown by pfvad system, 2013, Çukurova University.
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