Production and characterization of ZnO and Al doped ZnO films by SILAR method

In this study, undoped ZnO and Al-doped ZnO thin films at different concentrations were successfully grown on ITO substrate by SILAR (Sequential Ionic Layer Adsorption and Reaction) method. The thin films produced were characterized by scanning electron microscopy (SEM/EDS), X-ray diffraction (XRD), and UV-VIS spectroscopy. According to the XRD analysis results, it was observed that the produced thin films crystallized at the nanoscale and that the crystallization quality changed depending on the Al additive concentration. SEM/EDS analysis results showed that the concentration of Al doping has a significant effect on the morphology of ZnO thin films. UV-VIS analysis results showed that there were significant differences in both optical band gap values and transmittance of the produced thin films depending on the additive.