Study the effects of radiation on the semiconductor circuit elements

At present, the problem of increasing performance and radiation resistance of transistors has been given much attention as electronic equipment of spacecraft, including satellites, is exposed to various radiation emissions, such as the Earth's radiation belts, cosmic and galactic rays. For research in this field it is necessary firstly to develop a transistor model that takes into account all the effects, including the effects of radiation. As it is known, the performance increase of silicon bipolar transistors is limited to the geometrical dimensions of p-n junctions, as well as to the part of the base, which is determined primarily by the parameters of electric strength. Thus, a large decrease in the base thickness leads to a sharp decrease of the clamping voltage of the transistor. But to prevent it, increasing the doping level of the base may lead to a significant reduction of the emitter junction breakdown voltage. The proposed technological methods of production and their influence on the parameters of the bipolar transistor can be simulated on a PC. The paper presents a single-level model to identify the constant of the radiation changes in the lifetime of minority carriers in the base of n-p-n transistors, DLTS spectra base of n-p-n transistors and describes the results.