The determination of the basic parameters of metal-semiconductor contact with SiO2 interface grown by RF sputtering method

In this study, we have investigated some parameters of Al/n-Si/SiO2/Au structures depend on frequency (50 kHz-5 MHz) and temperature (80 K-390 K). Capacitance-voltage (C-V), conductance-voltage (G/w-V) and current-voltage (I-V) measurements at different frequency and at different temperature were made. From these measurements we calculated series resistance (Rs), potantial barrier height(?b), interface state density (Nss), Fermi energy (EF), idealite factor(n) depending on frequency and temperature. Results shows that almost all the basic parameters of this structures change by interface state density, series resistance, d.c. voltage, frequency and temperature. Key Words : MIS structure, MOS structure, SiO2, idealite factor, interface state density