The investigation of temperature dependent electrical characteristics of Schottky diodes

Current-voltage (I-V) characteristics of (Al/SiO2/p-Si) Schottky diodes have been investigated in the temperature range of 295-400 K. The experimental forward bias I-V analysis based on the Thermionic Emission (TE) theory has revealed the zero-bias barrier height ?B0 decrease, the ideality factor n increases as the temperature decreases. These behaviors are attributed to Schottky barrier inhomogeneties by assuming a Gaussian distribution of barrier heights (BHs) due to barrier height inhomogeneties that prevails at interface. To obtain evidence of a Gaussian distribution of the BHs, we have drawn a ?B0 vs q/2kT plot, and the values of ??Bo=1.18 eV and ?o=0.1386 V for the mean barrier height and standard deviation at zero bias, respectively, have been obtained from this plot. The obtained value of the Richardson constant, obtained from modified Richardson plot using the value of ?o, 33.26 A/cm2K2 is very close to the theoretical value of 32 A/cm2K2. At the same time, the density of interface states distribution profile as a function of Ess-Ev, obtained from forward bias I-V measurements by taking into account the bias dependence of the effective BH, decreased with increasing temperature. In addition, using the plots of C-2-V, diffusion potential (Vd), barrier high (?? ?? ) depletion layer width (WD), were calculated at a frequency of 500 kHz, at a room temperature.