Preparation of Ag/n-Si metal-semiconductor bi-structures via low-temperature deposition method and investigation of characteristic properties

The most important point of this thesis is use of a new technologic process that have never been applied before, in formation of Ag/n-Si bi-structure. In this new application which is low temperature deposition method, substrate surface is coated with equal size grains. This growth mechanism is named soliton mechanism. As known, when equal sized silver grains are irradiated with UV lights, surface plasma resonance phenomenon occurs. By using this characteristic of silver grains and evaporation of silver over n-Si based policrystalline structure surface via low temperature deposition method at 200 K and 300 K temperatures and in almost close environment, Ag/n-Si bi-structures (Schottky diode) have been formed for the first time without any thermal damage. These bi-structures have been exposed to photo-excited diffusion process for metal semiconductor gate formation. Structural characteristics of acquired samples have been examined via XRD, SEM, EDS and FESEM measurements. Electrical parameters such as ideality factor (n) and zero bias barrier height (Φb) have been calculated from I-V measurements. Also serial resistor (Rs) and ideality factor (n) have been calculated by using Cheung method. It is observed that characteristics of produced Schottky diodes at 200 K substrate temperature are more efficient than 300 K temperature because silver layer on silicon surface is formed as equal sized grains at 200 K substrate temperature and when these layers are irradiated with UV lights, plasma resonance phenomenon occurs on surface of diode.