Production of P and N type ZnO films and P-N junctions by spin coating

Since ZnO is an environmentally friendly material that can be easily produced by physical and chemical methods, it has been the subject of our study. In this study, both undoped and In-doped n-type and K and Cu-doped p-type ZnO thin films were produced on glass substrates by spin coating method, which is inexpensive and allows coating in the desired size. ZnO p-n junctions were fabricated using 2% K and 1% Cu doped ZnO thin films that were annealed at two different temperatures and exhibited electrically p-type behavior. In the literature, p-type ZnO thin films produced by both physical and chemical methods are mentioned. However, very few of these p-type ZnO thin films were converted into p-n homojunction structures. For this reason, it has been shown that ZnO p-n joints on glass substrates can be made by preparing solutions for both layers and annealing only at different temperatures. The ideality factor, barrier height, series resistance values and interface conditions of the produced p-n junction structures were calculated and found to be compatible with the literature.