Some physical characteristics of Zn added CuInS2 films produced by spray pyrolysis method

In this thesis, some physical characteristics of Cu(Zn)InS2 films were studied 10-50% of Zn was added into the semiconductor CuInS2. The films were grown by the spray pyrolysis method at 225-275 °C substrate temperatures. It was determined that the films were p-type and band gap energy values were ranged between 1,51-2,70 eV. The transmission, reflectivity, refractive index, extincition coefficient and dielectric coefficient graphics were obtained from the fundamental absorption spectra. By means of X-ray difractions, the films were determined to exhibit chalcopyrite and hegzagonal structures. The surface morphologies were studied via scanning electron microscopy (SEM) and shown that films have almost been homogenous structure. Keywords: CuInS2, Semiconductor, Spray Pyrolysis, Fundamental Absorption, Chalcopyrite