Synthesis and characterization of nanocrystalline CdS1-x CuSx thin films for solar cell applications

In this study, thin films of CdS 1-x CuS x with a concentration of 0.1M, were prepared by spray chemical technique on glass bases at a temperature of 673 K and with a thickness of 300 ± 50 nm. The values of the absorption coefficient, refractive index, attenuation coefficient, and the real and imaginary part of the optical dielectric constant were calculated. The electrical results (Hall Effect) showed that the pure CdS films are of the n-type type and have a negative Hall coefficient. As for the rest of the films prepared from CdS impregnated with percentages of 3, 6, and 9 % of copper sulfide, they are of the p-type and have Hall coefficient is positive, and the values of concentration, conduction, and mobility carrier concentration, as it was found that each of them increases with the percentage of doping. As for the resistivity values for all films, it was found that they decreased with the increase in doping percentages. On the other hand, the "Vo.c, Is.c, Vm, Im, FF, and efficiency" of the solar cell were measured. The parameters of the solar cells were found using a test system (I-V) under illumination. The results showed that the low efficiency of the CdSCuS/n-Si solar cell was found.