Optoelectronic investigation of resonance tunneling through a single quantum well

The resonant tunneling diodes have potential to be used in many new applications and enlighten unanswered questions in the fundamental physics although they had been proposed long time ago. The concept of resonant tunneling has crucial importance for light emitters and photo detectors based on impurity atom transitions. For this purpose, the factors affecting double barrier resonant tunneling diode performance should be defined and characterization results of produced test samples have to be investigated. In this thesis, double barrier resonant tunneling diodes based on GaAs/AlxGa1‐xAs materials were grown by molecular beam epitaxy and parameters dependent on current mechanism of the structure were defined. Photoluminescence, electro photoluminescence and current-voltage methods including temperature dependent measurements were employed to characterize the devices with different quantum well and barriers produced within this framework. In order to provide a basis for THz applications, resonant tunneling current mechanism was studied through impurity atoms doped in quantum wells. The experimental results obtained were extensively studied and compared to theoretical calculations.