Transition metal dichalcogenide monolayers for gas sensor applications

Recently, transition metal dichalcogenide materials (TMDC) have drawn interest because of their layer dependent electronic and chemical features to use in various device applications. 2D TMDC materials have large interaction capacity with gases as a result of their large surface areas. Purpose of using gas sensors is to identify and quantify features of detected gases in an environment. This type of devices is essential in many different areas for example, in emission control, military and medical diagnosis. These two dimensional TMDC materials are showing properties of semiconductor with a layer-dependent bandgap. In transistor, semiconductor TMDC materials can be used as a channel material and this type of FET devices can be used as gas sensing devices. For using in gas sensor applications, it is necessary to produce large scale monolayer TMDC flake growth. In this thesis, by using a piece of glass as catalytic in CVD experiments monolayer and large scale growth of TMDC materials was carried out. The growth TMDC flakes were analyzed by optical microscopy, Raman and photoluminescence spectroscopy and atomic force microscopy. The growth was realized on the Si/SiO2 substrate, so FET device was able to produce without transferring of the flakes.