Fotoelectric properties of semiconductor gas discharge structures

SGDS photodetector instabilities was studied experimentally at different gases in a wide pressures p range, interelectrode distances d and different diameters D of the detector areas. The CVC of the gas discharge system with GaAs cathode was studied. While being driven with a stationary voltage, it generates current and DLE instabilities with different amplitudes of oscillation. It was unambiguously proved that instabilities in the SGDS may be provoked by a detector, depending on the experimental conditions. SGD with an N-shaped CVC was analyzed using both the current and DLE data showing the electrical instability in the GaAs detector. The presence of deep electronic levels of defects, so called EL2 centers, give rise to the N-type CVC of the material, as a consequence, to oscillations in current when a dc voltage of a high magnitude is applied to a GaAs detector. The current instabilities that are due to dynamical of electrical domains, namely, by their generation, movement and decaying are observed in the system. It was found that application of high U0 to the detector give rise to non-uniform spatial distribution of the DLE, which disturbed the operation of the system.