Investigation of thermomagnetic effect on semiconductors

The determination of thermoelectric and thermomagnetic properties of semiconductors have become one of the most prominent research subjects in physics and related engineering fields. So far, a variety of theoretical approaches aimed at calculating these properties have been proposed. However, the results derived from the application of the proposed methods are valid and consistent only within limited variation ranges of temperature and certain thermodynamic parameters. It's in this context that B.M Askerov first suggested a systematic approach to the shape of the band structures of semiconductors, thus paving the way for the calculation of the aforementioned properties. Despite the resulting simplification due to the reduction of the calculation to two-parameter Fermi functions, usage of this approach has been rather limited by the inherent difficulties in analytical Fermi calculations. This thesis makes use of this recent analytical approach to obtain expressions for temperature variations for the number of Lorenz, carrier concentration and Hall coefficient, which are some of the semiconductors' thermomagnetic properties. In the study, these parameters were obtained for the Si, Ge, GaAs, GaAs-Ge and InAs semiconductor in the Mathematica programming language. In order to demonstrate the effectiveness of the resulting expressions, the Lorenz number, concentration and Hall coefficient values of these semiconductors results of ampiric and semi ampiric calculations found in the literature, as well as the results of Mathematica numerical calculation and the result of this study, are provided in a comparative fashion. It was seen that the results were compatible with each other.