Modeling and application of plasma processes in semiconductor gas discharge system

In this study, we have investigated the changes in the infrared values by using dc argon plasma systems. In dc Argon plasma systems, different semiconductor materials are used as cathode and SnO2 coated glass plate is defined as anode. Both theoretically and experimentally researches have been made for different pressure (P) and electrode distance (d). Argon gas was used in our system for plasma formation. Multivariate values were observed for different P and d values by using plasma parameters, especially at low pressure values, but no significant change was observed at atmospheric pressure level or close to P and d values. In addition, no significant difference was observed in the measurement values of the current voltage characteristics. Theoretically, electron temperature, average electron energy, mobility, electrical potential, surface charge density, thermal velocity, spatial charge density, electron density and Townsend coefficients were calculated. it is made. By measuring the secondary emission coefficient values, the paschen curve of the plasma system is determined based on the different parameters. The results obtained here determined the operating voltage of the plasma system and how the most efficient current-voltage characteristic should be. The voltage applied in experimental studies is between 1000V - 2000V, and in our theoretical studies, Ac-Dc module and Plasma module of COMSOL Multiphysics program have been completed.