Temperature dependent electrical properties of high doped InxGa1-xAs alloy semiconductor

In this study, Hall measurement and conductivity analysis have been investigated for 3 samples of n-type InxGa1-xAs/InP (x = 0.42, 0.43, 0.44) and one sample of n-type InxGa1-XAs/GaAs (x = 0.20) samples grown by MBE crystal growth method. Conductivity, Hall mobility and carrier concentration were measured in temperature range of 15-300K and under 0.4T magnetic field. Electron transport characteristics of the samples with the values of x = 0.42, 0.43 and 0.44 were determined by the metallic model containing electron - electron interactions and weak localization effects. Also, scattering mechanisms effect the mobility of electrons that were determined. Elektron conduction properties of the sample with the value of x = 0.20 were analized by using an iterative solution of the Boltzmann equation (ISBE) with two ? band model. It was seen that there was a good agreement between the theory and the results.Key Words : MBE, InxGa1-xAs/InP, electron - electron interactions, weak localization, ISBE, scattering mechanisms