Preparation of Al/p-Si metal-semiconductor (MS) structures and frequency-dependent investigation of dielectric properties

This thesis consists of five chapters. The first and second chapters provide information about the literature review, motivation and contribution of the thesis. In the third chapter, general information about the formation of MS contacts and MIS contacts is given. In the fourth chapter, Al/p-Si MS structures are prepared and their dielectric properties such as dielectric constant (ε'), dielectric loss (ε''), dielectric loss angle (tanδ), ac electrical conductivity (σac), real and imaginary electrical modulus (Μ' and Μ'') are investigated using experimental capacitance-voltage (C-V) and conductivity-voltage (G/ω-V) measurements in the frequency range of 5kHz-1MHz and at room temperature. Experimental results show that both electrical and dielectric parameters strongly depend on frequency. ε' and ε'' decrease with increasing frequency. At the same time, the electrical conductivity ac (σac) increases with increasing frequency. Using the 1/C²-V plot; potential V0, barrier height ΦB, density of donor atoms ND, depletion layer width WD and Em were calculated. In the conclusion section, the importance and results of the thesis are presented.