Deposition and characterization of p-type ZnO films by pulsed cathodic vacuum arc deposition technique

In this study, N-doped ZnO films were obtained by the oxidation of ZnxNy thin films deposited on glass substrates employing pulsed cathodic vacuum arc deposition system. The influence of annealing temperature, on the electrical, structural and optical properties of asdeposited ZnxNy films was investigated. The N-doped ZnO films obtained on glas substrate in O2-N2 gas mixture were also investigated. p-type ZnO:N films were obtained by annealing of the as-deposited films at 450 °C. The influence of O2 to N2 ratio on the electrical and optical properties of the as-deposited and annealed films was studied .In addition, ZnO:N film with the 5:3 ratio of O2 to N2 and ZnxNy film were deposited on n-type (100) Si substrate. These films were annealed at 450 ? for one hour to form p-ZnO/n-Si hetero-junction structures. The current-voltage (I-V) characteritics of the structures have been measured at room temperature