Comparison of the pholuminescence properties of the n and p-type zno thin films which are grown by PFCVAD system
2014
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Advisor: Prof. Dr. Hamide Kavak
Abstract (EN)
In this study, n and p-type ZnO thin films were deposited at room temperature (25°C) on glass substrate susing Pulsed Filtered Cathodic Vacuum Arc Deposition (PFCVAD) system. p-type ZnO films were obtained with N-doping in O2-N2 gas mixture. Finally, optical, structural, electrical, surface images and photoluminescence properties of these thin films were determined and discussed.
Author
Havva Özdamar
How to Cite
Havva Özdamar (Doctorate thesis). Comparison of the pholuminescence properties of the n and p-type zno thin films which are grown by PFCVAD system, 2014, Çukurova University.
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