Comparison of the pholuminescence properties of the n and p-type zno thin films which are grown by PFCVAD system
2014
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Danışman: Prof. Dr. Hamide Kavak
Özet (EN)
In this study, n and p-type ZnO thin films were deposited at room temperature (25°C) on glass substrate susing Pulsed Filtered Cathodic Vacuum Arc Deposition (PFCVAD) system. p-type ZnO films were obtained with N-doping in O2-N2 gas mixture. Finally, optical, structural, electrical, surface images and photoluminescence properties of these thin films were determined and discussed.
Yazar
Havva Özdamar
Bu Yayına Nasıl Atıf Yapılır
Havva Özdamar (Doctorate thesis). Comparison of the pholuminescence properties of the n and p-type zno thin films which are grown by PFCVAD system, 2014, Çukurova University.
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