Deposition and characterization of Cu2O semiconductor thin films by SILAR method using different copper salt resources

In this study, Cu2O thin films were prepared using four different copper salt [copper(II) asetat monohydrate (Cu(CH3COO)2•H2O), copper(II) sulfate pentahydrate (CuSO4•5H2O), copper(II) nitrate trihydrate (Cu(NO3)2•3H2O), copper(II) chloride dihydrate (CuCl2•2H2O)] sources via Successive Ionic Layer Adsorption and Reaction (SILAR) method on a glass substrate. We deposited Cu2O with 10, 20, 30 and 40 immersion cycles. The films are then examined in terms of their structural, optical, morphological and electrical properties. Optical properties such as optical transmittance (T%), refraction coefficient (R%), absorption (A), refraction index (n), absorption coefficient (α), extinction coefficent (k) and energy band gap (Eg) are determined by UV-Vis spectrophotometry. X-Ray Diffraction (XRD) analyses reveal that the material structure is indeed in a cubical form and polycraystal phase. It is deduced from FE-SEM (Field Emission Scanning Electron Microscope) imaging that the thin film formation usually consists of spherical particles, often with an exception of a combination between spherical and linear particles. From the Hall effect measurement, it was found that Cu2O thin film exhibits p-type conduction. Its electrical resistivity (ρ) values were calculated in the range 1.25x103-6.10x104 Ωcm. The charge mobility (μ) values were in the range from 2.24x101 to 8.74x102 cm2V−1s−1.