Determination the physical properties of Y:SnO2 nanostructured films deposited by ultrasonic spray pyrolysis

In this study, p-Si substrate with (100) orientation and 1-10 Ω-cm of resistivity was used. 5x10-2 molar (1.64 grams) solution of tin oxide (SnCl2.2H2O, Tin (II) chloride dihydrate) sample was prepared by using 150 mL isopropanol (C3H8O, 2-propanol). 50 mL of deionized water was used for the 1x10-2 molar (0.15 gram) solution of the yttrium (YCl3.6H2O, Yttrium (II) chloride hexahydrate) for dopping. Thin films which are coated on glass and p-Si substrates were prepared to be 0 %, 1 %, 2 %, 3 %, 5 %, respectively. The forbidden energy band gap of the prepared samples was determined with the help of the α(hν)2-hν graph at order 3.8 eV. For the diode construction, the silver metal was thermally evaporated in a high vacuum environment to obtain the Ag / YSnO2 / p-Si structure. I-V measurements of the produced Ag / YSnO2 / p-Si diodes were taken under the light intensity of 100 mW / cm2 in the dark environment at room temperature. It was observed that the sensitivity of the light was negligible. Current-voltage (I-V) and capacitance-voltage (C-V) measurements were performed. When the obtained I-V graph shows diode rectifier characteristic; the average ideal factor and the average barrier height values were determined as 4.03 and 0.505 eV, respectively. By using Norde functions, the average series resistance values were calculated as 25.02 Ω. C-V measurements were taken at 0.1-2 MHz and the barrier height was calculated by using C-2-V graphs and compared with other indications. It has been shown that the produced structure can be used in applications such as electronics.