Investigation of optical, structural, morphological and electrical properties of Cu2O thin films

In this thesis, copper (I) oxide (Cu2O) thin films were synthesized by SILAR method on glass substrates at 50 o C in 10-, 20-, 30- and 40-immersion cycles. Structural, optical, morphological and electrical properties of thin films were examined interpreted in detail. From the XRD results, it was seen that the Cu2O thin films were in polycrystalline structure, cubic phase and the preferential orientation of the crystal (111) along the Miller plane. It has been determined that the thickness values of Cu2O thin films increase as the number of immersion cycles increases, and accordingly, the optical transmittance values at room temperature decrease. It has been determined that the thickness values of Cu2O thin films increase as the number of immersion cycles increases, and accordingly, the optical transmittance values at room temperature decrease. The energy band gap values of Cu2O thin films were calculated as 2.47 eV, 2.44 eV, 2.41 eV, and 2.38 eV, respectively. It has been observed that the energy band gap values of the copper oxide thin films decrease with the increase of the thickness values of the thin films. It was seen from the FE-SEM images that the Cu2O thin films were formed in a cauliflower-like structure.