The effect of radiation on the current-voltage (I-V) characteristics of Au/Bi4Ti3O12/SiO2/n-Si (MFIS) structures

Determining the radiation effects on the basic electrical parameters of the fabricated high-dielectric MFIS structures, they were exposure to the high-energic of 60Co γ-rays. For this purpose, the values of ideality factor (n), zero-bias barrier height (Bo) and series resistance (Rs) of them were extracted from the forward biases I-V data before and after irradiation by using various method such as standard thermionic-emission (TE) theory, Cheung's and Norde functions. Additionally, the energy dependent profile of surface states Nss were extracted by considering voltage dependent of n, , and Rs and compared each other. Experimental results show that the reverse saturation current (Io), n, and Rs values increase with increasing radiation dose,  decreases. When the value of Rs by considering in the calculation of Nss, they were found considerably decrease. The observed low discrepancies between Nss after irradiation show that the used a high-dielectric ferroelectric interlayer leads to an increase the resistance of MS across to radiation. This is more important to fabricated radiation-resisted an electronic device, especially in the satellites due to hard-radiation in space. As a result, Nss, Rs and the existence of interlayer are more effectual on the I-V characteristics which must be considering in the electrical parameters calculation.