Effects of substrates on characteristics of SnS thin films and device application on silicon

The aim of this thesis is to investigate the deposited on different substrates SnS thin films in terms of structural, surface and optical properties. In addition to these, the electrical properties of SnS thin film have been focused. In this context, SnS thin films were first deposited on soda lime glass (SLG), silicon (Si), ITO and FTO substrates using electron-beam technique. Structural characterization of the films was done using X-ray diffraction (XRD) and energy dispersive spectrometry (EDS). It was used for surface analyze of the SnS thin films for atomic force microscopy (AFM) and scanning electron microscopy (SEM). UV-Vis spectroscopy was utilized for optical characterization of the films and band gap values were calculated. Electrical characterization of the SnS thin films was carried out via temperature-dependent current-voltage (I-V) and photoconductivity measurement. In the next step, device characterization of SnS/Si structure was performed. Likewise, electrical characterization was done for device performance. In addition, I-V measurement under dark and different light intensity conditions was carried out at room temperature. According to the results, it was determined that the SnS thin films deposited on different substrates showed structural, surface and optical properties which correspond to the literature. It was also determined that the SnS/Si structure had photodiode behavior.