Producti̇on of graphene based photodetector and characteri̇zati̇on of the electri̇cal properti̇es

In this thesis, the graphene oxide doped methylene blue composite (MB+GO) materials were prepared. Firstly, the graphene oxide was synthesized by Hummer`s method. The MB+GO/p-Si Schottky diode based on photodetectors were prepared. The electrical and photoresponse properties of the photodetectors were investigated by capacitance-conductance-voltage and current voltage measurements. The barrier height, ideality factor and photoresponse parameters of the photodetectors were determined. It was found that the photoresponse properties of the prepared photodetectors were improved by graphene oxide dopant. An important performance metric of the photodetectors is the normalized photocurrent-to-dark current ratio (NPDR) for the prepared diodes were calculated and the highest value was obtained to be 4.9x10-2 A/W for 0.05 GO doping ratio. The obtained results indicate that the MB+GO film/p-Si photodetectors can be used in optoelectronic applications. Key Words: Graphene, Graphene Oxide, Photodetector, Organic Semiconductor.