Yarı iletkenlerin serbest enerjisi ve entropisinin Einstein-Debye yaklaşımı kullanılarak analitik olarak incelenmesi

It is known that the study of almost all remarkable properties of semiconductors, which determine the rapid development of modern electronic technology, is today's important field of study. Due to their small size and moderate power consumption, it has become possible to connect semiconductor transistors to increasingly larger microcircuits and later microprocessors. Therefore, the study of physical, chemical and other properties of semiconductors is one of today's hot topics. As it is known, many properties of semiconductors such as electrical, thermodynamic and magnetic properties according to their electronic structure can be studied by theoretical and experimental methods. One of the most important of these properties is the inevitable defect formation processes in the crystal structure from the thermodynamic point of view and the related electronic processes play an important role in the study of the undesirable effect on the physical properties of the material. Important theoretical approaches have been proposed to study the thermodynamic properties of semiconductors. One of these methods is the Einstein-Debye approach, which has been proposed recently but has not been widely applied. As a result of the investigations, it has been observed that the results obtained from the temperature dependence of the thermodynamic properties of semiconductors are more sensitive than the Einstein-Debye approach. In this thesis, an analytical expression for the entropy and Gibbs energy according to the Einstein-Debye approach is established and the results of the calculation of the entropy and Gibbs energy of InP, InAs, GeS and ZnO semiconductors over the entire temperature range are compared with the results of different experimental-theoretical studies. The results are presented and analyzed graphically and tabularly for different values of temperature.