Fabrication and characterization of the OFET based on novel cobalt phthalocyanine containing alkyl chain

An organic thin film transistor (OTFT) and organic field effect transistor (OFET), based on novel cobalt phthalocyanine (CoPc) was fabricated with SiO2 as the gate dielectric material. Novel alpha-substituted cobalt phthalocyanine bearing 1-Dodecanol moiety has been characterized by 1H NMR, FT-IR, MALDI-TOF/MS, UV-Vis spectral and thermal analysis. Subsequently, the electrical characterization of the composite semiconductor material and the new synthesized CoPc layered OTFT was investigated. Au were deposited for gate and Ag were deposited for source and drain contacts of the device by using thermal evaporation method. CoPc layer was prepared with spin coater method. The CoPc OTFT exhibited saturation at the order of µFET of 2,01x10-1 cm2/Vs. Ion/Ioff and VT of this device were calculated 2x102 and -2,25 V, respectively. The result of this study shows us that the new synthesis CoPc has a remarkable performance on OTFT. Keywords: OTFT, OFET, cobalt phthalocyanine, SiO2, composite semiconductor, mobility