The effect of light electrical properties of Al/P3HT/p-Si structure obtained with P3HT poly( 3-hexylthiophene) organic film

In this thesis, we have used p-type Si semiconductor crystal with (100) orientation and resistivity between 5-10 ?.cm. Si wafer has been cleaned by RCA method. Then, ohmic contacts on the unpolished surface formed by evaporation of Al under high vacuum and thermal annealing at 570 ºC temperature for 3 minutes under N2 atmosphere in the quartz tube furnace. A few drops of P3HT organic solutions have been dropped on the polished surface of Si with ohmic contact and it has been left to dry. In this way, Al/P3HT/p-Si has been obtained by evaporation of Al on P3HT/p-Si structure.Characteristic parameters of the diode have been determined using current?voltage (I-V) measurements. Barrier height and ideality factor values of Al/P3HT/p-Si diode have been determined as 0.78 eV and 2.43 in dark 0.76 eV and 4.07 under light, respectively. These results attributed photosense of the diode.Keywords: Organic film,p-type Si, electrical properties