Annealing effect on properties of MnS thin films grown with the chemical bath deposition method

In this study, MnS semiconductor films have been obtained with different deposition times and different temperature (27-40-50-60-70-80 oC) on to the glass substrates by the chemical bath deposition method. X-ray diffraction spectra of the films have shown that the films are crystal and wurtzite MnS in structure. MnS films have been determined to have direct band gap characteristics with the band gap values lying in the range between 3.7-3.9 eV by using optical method. The ohmic conduction mechanisms have been observed in the I-V characteristics of the films. The electrical conductivity values of the films have been found to vary in the range, (1-8).10-6 (?.cm)-1. MnS films annealed in azot atmosfer at one hour and investigated of optical and structural properties. The activation energy values have been found 0.2-0.58 eV using the temperature-dependent current measurements.