The investigation of dependence of characteristics I-C-V with work functions for metal/p-InP/metal Schottky contacts
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Abstract (EN)
An omic contact on the back side of the p-type InP is formed by sequentially evaporating Zn and Au layers on InP then;Zn, Ag, Au, Al, Ti, Cu, Fe, In, Ni, Pb, and Sn metals for Schottky contacts have been evaporated as dots with diamater of about 1 mm on the front of p-InP.Furthermore, the current-voltage (I-V) characteristics of Ti/p-InP Schottky diodes have been measured in a wide temperature range with a temperature step of 20 K, as an example.
Author
Sezai Asubay
How to Cite
Sezai Asubay (Doctorate thesis). The investigation of dependence of characteristics I-C-V with work functions for metal/p-InP/metal Schottky contacts, 2008, Dicle University.
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