Temperature dependent electrical characterization of n-Si/Mo Schottky diodes

In this study, n-Si/Mo metal-semiconductor contact was obtained by scattering Mo metal on n-Si semiconductor by DC scattering method. In current-voltage measurements made at room temperature and in the dark, it was seen that the structure has a rectifier contact feature. In order to examine the temperature dependence of the electrical properties of the n-Si/Mo Schottky diode created, current-voltage measurements in the range of 80-300 K were taken. Thermoionic emission theory is used for the electrical properties of Schottky diode. In the measurements made, it was determined that the ideal factor of n-Si/Mo Schottky diode decreases with increasing temperature. The analyzes also showed that there is a linear correlation between the ideality factor and the obstacle height, and the obstacle height for the ideal n-Si/Mo Schottky diode is 0.64 eV. It was observed that the obtained I-V curves deviate from linearity under forward feed voltage. The reason for this deviation is thought to be due to the series resistance effect of the diode. With the help of the functions proposed by Norde, the series resistance and obstacle heights depending on the temperature were calculated. In these analyzes, it was observed that the height of the obstacles increased exactly in parallel with the results obtained with the lnI-V data. It was stated that the difference between lnI-V data and Norde functions and calculated obstacle heights was caused by the difference between the methods. As the main reason for this, while calculating the obstacle height with the lnI-V data, the linear portion of the correct supply current-voltage graph is used, while using the correct supply current-voltage data to calculate the obstacle height with Norde functions. Keywords: Metal-Semiconductor Contact, Schottky Diode, Schottky Barrier Height