Examination of temperature dependent electrical properties of Au/Ru(II) complex/n-Si structure

In this study, the dependence of the electrical properties of Au/Ru (II) complex/n-Si structure formed by the newly synthesized Ru (II) complex on the temperature was investigated. For this purpose, an ohmic contact was formed by evaporation of the Au metal and annealing at 420 C for the n-Si subtrate. Then, the Ru (II) complex thin film was formed on the n-Si semiconductor by the spin coating and Au/Ru (II) complex/n-Si diode was formed by evaporation of the Au metal on the formed structure. It has been seen that the created structure has the rectifier property. Current-voltage (I-V) measurements of Au/Ru (II) complex/n-Si diodes were performed at wide temperature range (77-350 K). Basic electrical parameters of diode such as ideal factor, barrier height and series resistance values were calculated for each temperature. It was seen that the ideality factor and the series resistance values decreased with increasing temperature and the barriers increased with temperature. In addition, the I-V measurements of the structure were measured at different light intensities under a solar simulator, and it was found that the structure was sensitive to light. It was seen that the photoelectric properties such as sensitivity to light, open circuit voltage (VOC) and short circuit current (ISC) are increased by light intensity. It was attributed that the increase of the amount of light falling to the interface results the increase of the electron-hole pairs formed at the interface