The investigation of temperature dependent electrical characteristics of organic/inorganic structures

In this study, the Al/Alpc(aluminium phtalocyanine)/p-Si Schottky diode was producedand the I-V measurements of this diode were taken at the temperature range of 80-300K fordifferent temperatures. C-V measurement of this diode were taken at the room temperature (300K).Using these measures, the ideality factor (n), zero-bias barrier height (?B0), saturationcurrent (I0) of the diode were calculated. The I-V measurement was done with 20 mV stepsbetween -2V and +2V. By the Norde function, series resistance (Rs) was calculated. It wasfound that, particularly, the ideality factor (n) and series resistance (Rs) of the diode depend onthe temperature, and it decreases with increasing temperature. It was determined that the barrierheight increases when the temperature increases.As shown by C?V graph, the capacitance of diode increases with increasing positivevoltage and decreases with increasing negative voltage.