Organic-based diodes depending on current-voltage characteristics

In this thesis, Al/Coumarin 30/p-Si structure was formed using p-Si wafer with (100) orientation and Coumarin 30 with C21H12N3O2 moleculer formula. Current-voltage (I-V) characteristics of Al/Coumarin 30/p-Si were measured between 300 and 380 K and it was seen that the structure has rectifying behaviour. Electrical properties of the diode such as ideality factor, barrier height and series resistance were analyzed in the range of 300-380 K using I-V data. It was seen that when the temperature increases the both ideality factor and series resistance decreases and barrier height increases. It was observed that the barrier height of Al/Coumarin 30/p-Si structure was higher than the conventional Al/p-Si metal/semiconductor (MS) contact and the barrier height of Al/p-Si MS contact was Coumarin 30 interlayer increases the Al/p-Si MS contact. The I-V measurement of the device was also carried out at room temperature under a light with 100 mW/cm2 illumination. Photodiode property of the structure was observed. Furthermore, capacitance-voltage (C-V) and capacitance-frequency (C-f) measurements of the diode were carried out at room temperature. It was seen that the barrier height value obtained from C2-V plot was higher than the one obtained using I-V