Perovskite güneş pili için pld tekniği ile WO3katkılı InZnO filmlerinin fotovoltaik performansınıgeliştirme

This study investigated the effect of composing indium-zinc oxide IZO with tungsten oxide and prepared as a thin film by pulsed laser deposition technique on the characteristics of the deposited IZO thin films. The X-Ray Diffraction (XRD) shows to compose of the IZO with different ratios of WO3, causing the appearance of hybrid ZnO and WO3 phases. Doping with WO3 highly effect lattice constants, crystalline size, and lattice strain. The crystalline size reduced with increasing the WO3 to 15 %, while the opposite behavior appeared for the lattice strain and fluctuation of the lattice constants due to the incorporation of some of the W atoms within the ZnO lattice. The optical absorption is slightly increased, and the energy bandgap is reduced (from 2.8 to 2.1 eV) with the WO3 content. Hall Effect measurement shows that all films were n-type, charge carrier mobility decreased, while the mobility reduced, and the conductivity enhanced with WO3 content. The I-V characteristics of the ZnO/p-Si, IZO/p-Si and IZO: WO3/ p- Si heterojunction at different WO3 ratios show photovoltaic behavior. Here, with a 15% contribution, it is the sample with the highest efficiency (η=5.60%).