The effect of semiconductor metal oxide mixtures on photosensor sensitivity

Zinc Oxide (ZnO) and Titanium Dioxide (TiO2) are electrically and optically proven semiconductors that are frequently used as metal oxides. Although many photosensor applications for ZnO and TiO2 metal oxide semiconductors are seen in the literature, the number of studies on composite-based photosensors is rare. In particular, there are not many studies in the literature on photosensor applications produced with the ZnO:TiO2yarı composite interface.. In this context, combining the superior properties of two semiconductors in the same composite with the sol-gel method will bring a unique and innovative perspective to our study. In this study, it is aimed to produce high sensitivity photosensors by using ZnO:TiO2 composite semiconductor in different ratios. First of all, ZnO, TiO2 metal oxide semiconductors were synthesized in different volumes by the sol-gel method. When constructing the active layer of photosensors, drop casting and spin coating techniques were used. In addition, the electrical, structural and mineralogical properties of the produced thin films were investigated and compared with the literature. By using the data obtained from the characterization, some electrical parameters were calculated. According to the calculations, it has been determined that composite-based semiconductor photosensors are electrically and optically compatible with each other.