Investigation of metal contact properties at ZnO based semiconductors
2011
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Advisor: Prof. Dr. Hamide Kavak
Abstract (EN)
In this study thin zinc nitride and zinc oxide films were deposited at room temperature on glass substrates by a pulsed filtered cathodic vacuum arc deposition (PFCVAD) system. The zinc nitride thin films changed into p-type ZnO (Zinc Oxide) thin films by annealing at 450 °C. As deposited n-type ZnO (Zinc Oxide) thin films annealed at 450 °C. Optical properties of these thin films were determined. The metal contacts were made on these thin films with Ag (Silver), Al (Aluminium), In (Indium) by Vacuum Thermal Evaporation system. The contact properties of these films were investigated by I-V measurements. The contact types were found to be ohmic.Key Words: PFCVAD, ZnO, ohmic Contact, Schottky Contact
Author
Nihal Tozlu
How to Cite
Nihal Tozlu (Master Thesis). Investigation of metal contact properties at ZnO based semiconductors, 2011, Çukurova University.
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