Chitosan interfacial layer and nonlayered Au/Kitosan/n-Si/Au electrical characterization and using as the construction of device

In this study, the ideality factor and the barrier height of Au/n-Si/Au structure calculated as a reference. These parameters were determined as 1,21 and 0,678 eV, respectively. Likewise, the ideality factor and barrier height of the Au/ Chitosan/n-Si/Au created with chitosan material were calculated. As a result of the calculation these parameters determined as 2,69 and 0,734 respectively. The barrier height and series resistance of both materials were calculated by Norde function. These values of Au/n-Si/Au structure were calculated as 0,62 eV and 546,1 ohms, respectively. In the same way these values of Au/Chitosan/n-Si/Au determined as 0,747 eV and 38805,6 ohms. The structures some parameter, as efficiency, were determined under varying light intensity. It was understood by comparing properties of these two materials that Au/Chitosan/n-Si/Au structure showed metal- insulator- semiconductor (MIS) photodiode behavior and photodiode can be produce with this material.