The investigation of electrical properties organic semiconductor/inorganic semiconductor diode

In this study,we have used p-Si with(100) orientation and resistivity ?? 5-10 ? -cm Our purpose is experimentally to investigate the characteristic parameters and the interface state density distribution of metal/semiconductor Al/p-Si contacts.Furthermore, the effective Schottky barrier heihts and ideality factors obtained from the current-voltage(I-V) characteristics have differed from diode to diode although the samples have been identically prepared.Therefore,it has also been exampled the reason of the linear relationship between effective barrier heights and ideality factors.We have prepared the MS Al/p-Si contacts in our research laboratory.The RCA clean with HF dip shows a predominant coverage of the surface with hydride groups.After HF etching,the Si surfaces is predominantly terminated by various hydrides. .After ,Ohmic contacts on the lustreless surface wafer formed under high vacuum by evaporation of Al and thermal annealing at 580 0 temperture for 3 minutes in flowing N2 in the quartz tube furnace. Tips:Meppv organic film solutions have been droppen on the bright surface of Silisium with ohmic contact and it have been left to dry.İn this way organic film has been obtained. Al/ Tips:Meppv /p-Si has been obtained by evaporation again Al on the surface were formed Tips:Meppv /p-Si structure.The characteristics parameters of the structures have been determined using current-voltage(I-V) measurements.This measurements have carried out in dark and under illumination.Therefore,H-terminated Al/p-Si structures showed the rectifying behavior.