Schottky diodes and examination of some electrical parameters

In this study, (100) oriented and 110?cm pSi crystals have been used. pSi/ Quercetin/Al Schottky barrier diodes have been fabricated by adding 8.27´10 6 M solutions of the Quercetin in etanol on top of pSi substrates and then evaporating the solvent. The electronic and interface state density distribution properties were obtained from the current?voltage (I?V) of pSi/ Quercetin /Al Schottky barrier diode (SBD) at room temperature. From the IV graphics seen that this structure showed rectifying behavior. İdeality factor and barrier height were calculated by InIV graph plots as 1.49, 0.84 eV. dV/d(lnI)I and H(I)I graphics drawed by using Cheung functions. Series resistance and ideality factor were calculated as 3.23MW, 1.68 respectively by using dV/d(lnI)I graphics. Series resistance and barrier height calculated 3.24MW, 0.82eV respectively by using H(I)I graphics. Energy distributions of interface state densities of our diode were calculated using IV data. İnterface state densities, Nss were calculated 5.012x10 13 cm 2 eV ?1 for (0.652Ev) eV ve 3.206x10 12 cm 2 eV ?1 for (0.762Ev) eV. The interface state densities have exponential rises with bias from the midgap towards the top of the valence band