Püskürtme yöntemiyle tek targettan büyütülen kadminyum çinko teleryum ince filminin karakterizasyonu

In this thesis the structural, optical, material characterization of CdZnTe(CZT) thin films are performed under different temperatures. There is a significant difference here, which is the CZT thin films, as differently from the previous film techniques known in the literature, which are made using Radio Frequency (RF), and generated from CZT target material placed on a single RF sputterer instead of sputtering CdTe and Zn from two separate RF. Cd1-xZnxTe thin films were deposited subsequently onto heated and unheated glass front substrates by using a single sputtering target. 200 nm thin films were fabricated and characterized using UV? transmission spectroscopy, X-ray Diffraction (XRD), X-ray Photoelectron Spectroscopy (XPS), Energy Dispersive Spectroscopy (EDS) and Atomic Force Microscopy (AFM), Scanning Electron Microscopy (SEM). The transmission spectra in the region of the optical absorption band edge were measured for as-deposited and heat-treated CdZnTe samples. Band gap of the deposited films were found to be in the ranges of 1.70-2.24 eV. The XRD studies revealed that heated Cd1-xZnxTe films have a cubic-oriented (111), (220) and (311) polycrystalline structure, whereas heated films are mostly-amorphous. The effect of annealing temperatures on the composition of the thin films were then discussed. XPS measurements were performed in the depth profiling mode in order to understand the chemical composition of the films. SEM images were used for producing a magnified image of the sample and it was observed that post-annealing and deposition temperature has an explicated effect on the modification of the CdZnTe thin film structure and morphology. The chemical composition of source and deposited CdZnTe thin films were investigated by using energy dispersive Xray analysis (EDX or EDS) measurements. AFM was used for imaging CdZnTe thin films which deposited under different radio Frequency sputtering temperature and annealing temperature, then these images were analyzed with high-resolution. Finally, the concurrency between the bandgap values which were calculated from all of the other analysis methods and the UV spectroscopy method were examined.